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Product Introduction
Product Introduction
Pure‑V vacuum inert‑gas atomization produces high‑purity spherical vanadium powder, manufactured via the EIGA electrode‑induction vacuum atomization process (without crucible‑contact melting). The entire process is conducted under high vacuum and protected by ultra‑pure argon, specifically addressing the challenges of vanadium’s susceptibility to oxidation and the difficulty of impurity control. This premium reactive metal powder is tailored for 3D printing, thermal spraying, the nuclear industry, and sputtering targets.
II. Standard Chemical Composition (High-Purity Pure-V Vanadium Powder, mass fraction wt%)
1) 3N5 Industrial High-Purity Grade (General-Purpose for 3D Printing and Coating)
V (Vanadium): ≥99.95%
Impurity limits: Fe ≤ 0.015, Si ≤ 0.005, Al ≤ 0.008, Cr ≤ 0.01, Cu ≤ 0.005, C ≤ 0.008, O ≤ 0.03, N ≤ 0.002, H ≤ 0.001, total impurities ≤ 0.05%
| Chemical composition |
V |
Fe |
Yes |
Al |
Cr |
C |
O |
N |
Cu |
H |
| ≥99.5 |
≤0.015 |
≤0.005 |
≤0.008 |
≤0.01 |
≤0.008 |
≤0.03 |
≤0.002 |
≤0.005 |
≤0.001 |
| Physical properties |
D10(μm) |
D50(μm) |
D90(μm) |
Loose packing density (g/cm³) |
Tap density (g/cm³) |
Flowability (s/50g) |
| 24.80 |
37.72 |
52.89 |
3.40 |
20.50 |
≤45 |
Application areas
Aerospace
1. The combustion chamber and flame holder of a hypersonic scramjet are designed for long-term operation at 800–1000°C;
2. Lightweight, high-temperature-resistant missile nozzle structures and thermal‑load‑bearing components of aerospace vehicles;
Electronic
Semiconductor sputtering targets: high-purity vanadium thin films, used for depositing metal layers and barrier layers in integrated circuits.
An electrode composite additive for lithium batteries and solid-state batteries, enhancing electrode cycling stability.
Chemical industry
Chemical catalyst support; sintered blank for corrosion-resistant reactor liner.
Pure-V
Category:
Brand: Asia Materials
Category: High-Melting-Point Metals
Product Name: Pure-V
Specification and model: 15–53 μm, 45–105 μm, 53–150 μm
Appearance: Spherical
Oxygen content: ≤500 ppm
For more product details, please contact our product experts. We look forward to your call.
Product Introduction
Product Introduction
Pure‑V vacuum inert‑gas atomization produces high‑purity spherical vanadium powder, manufactured via the EIGA electrode‑induction vacuum atomization process (without crucible‑contact melting). The entire process is conducted under high vacuum and protected by ultra‑pure argon, specifically addressing the challenges of vanadium’s susceptibility to oxidation and the difficulty of impurity control. This premium reactive metal powder is tailored for 3D printing, thermal spraying, the nuclear industry, and sputtering targets.
II. Standard Chemical Composition (High-Purity Pure-V Vanadium Powder, mass fraction wt%)
1) 3N5 Industrial High-Purity Grade (General-Purpose for 3D Printing and Coating)
V (Vanadium): ≥99.95%
Impurity limits: Fe ≤ 0.015, Si ≤ 0.005, Al ≤ 0.008, Cr ≤ 0.01, Cu ≤ 0.005, C ≤ 0.008, O ≤ 0.03, N ≤ 0.002, H ≤ 0.001, total impurities ≤ 0.05%
| Chemical composition |
V |
Fe |
Yes |
Al |
Cr |
C |
O |
N |
Cu |
H |
| ≥99.5 |
≤0.015 |
≤0.005 |
≤0.008 |
≤0.01 |
≤0.008 |
≤0.03 |
≤0.002 |
≤0.005 |
≤0.001 |
| Physical properties |
D10(μm) |
D50(μm) |
D90(μm) |
Loose packing density (g/cm³) |
Tap density (g/cm³) |
Flowability (s/50g) |
| 24.80 |
37.72 |
52.89 |
3.40 |
20.50 |
≤45 |
Application areas
Aerospace
1. The combustion chamber and flame holder of a hypersonic scramjet are designed for long-term operation at 800–1000°C;
2. Lightweight, high-temperature-resistant missile nozzle structures and thermal‑load‑bearing components of aerospace vehicles;
Electronic
Semiconductor sputtering targets: high-purity vanadium thin films, used for depositing metal layers and barrier layers in integrated circuits.
An electrode composite additive for lithium batteries and solid-state batteries, enhancing electrode cycling stability.
Chemical industry
Chemical catalyst support; sintered blank for corrosion-resistant reactor liner.
Product Inquiry
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Contact Information
Consultation Phone Number
Email address
Email address
Company Address
Room 509B, Floor 5, Building 30, Compound No. 26, Xihuan South Road, Beijing Economic-Technological Development Area
